? semiconductor components industries, llc, 2015 july, 2015 ? rev. 5 1 publication order number: ss24/d ss22t3g, ss24t3g, NRVBSS24T3G surface mount schottky power rectifier smb power surface mount package these devices employ the schottky barrier principle in a metal?to?silicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. features ? compact package with j?bend leads ideal for automated handling ? highly stable oxide passivated junction ? guardring for over?voltage protection ? low forward voltage drop ? nrvb prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant mechanical characteristics ? case: molded epoxy ? epoxy meets ul 94 v?0 @ 0.125 in ? weight: 95 mg (approximately) ? cathode polarity band ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? available in 12 mm tape, 2500 units per 13 in reel, add ?t3? suffix to part number ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? esd ratings: machine model = c esd ratings: human body model = 3b smb case 403a schottky barrier rectifier 2 amperes 20, 40 volts www. onsemi.com ss2x = specific device code x = 2 or 4 a = assembly location y = year ww = work week = pb?free package ayww ss2x device package shipping ? ordering information marking diagram ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. ss24t3g smb (pb?free) 2500 / tape & reel ss22t3g smb (pb?free) 2500 / tape & reel (note: microdot may be in either location) NRVBSS24T3G smb (pb?free) 2500 / tape & reel
ss22t3g, ss24t3g, NRVBSS24T3G www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage ss22 ss24 v rrm v rwm v r 20 40 v average rectified forward current (at rated v r , t l = 132 c) i o 2.0 a peak repetitive forward current (at rated v r , square wave, 100 khz, t c = 127 c) i frm 3.0 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 75 a storage/operating case temperature t stg , t c ?55 to +150 c operating junction temperature (note 1) t j ?55 to +150 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction?to?lead (note 2) thermal resistance, junction?to?ambient (note 3) r jl r ja 24 80 c/w electrical characteristics maximum instantaneous forward voltage (note 4) see figure 2 (i f = 2.0 a) v f t j = 25 c t j = 125 c v 0.50 0.46 maximum instantaneous reverse current (note 4) see figure 4 (v r = 40 v) i r t j = 25 c t j = 100 c ma 0.4 5.7 2. mounted with minimum recommended pad size, pc board fr4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on fr4 board. 4. pulse test: pulse width 250 s, duty cycle 2.0%.
ss22t3g, ss24t3g, NRVBSS24T3G www. onsemi.com 3 figure 1. typical forward voltage figure 2. maximum forward voltage figure 3. typical reverse current figure 4. maximum reverse current figure 5. current derating figure 6. forward power dissipation 0.7 0.1 v f , instantaneous forward voltage (volts) 10 1.0 40 0 v r , reverse voltage (volts) 100e-3 10e-3 1.0e-3 100e-6 10e-6 1.0e-6 30 70 10 t l , lead temperature ( c) 3.5 1.5 1.0 0.5 0 i o , average forward current (amps) 0.5 2.0 0 1.2 1.0 0.8 0.6 0.2 0 50 i f , instantaneous forward current (amps) i 0.1 0.3 0.5 0.9 10 20 30 , average forward current (amps) i o 150 130 1.0 2.5 1.5 0.4 p fo , average power dissipation (watts) 100 t j = 125 c 100 c 25 c -40 c 0.7 0.1 v f , maximum instantaneous forward voltage (volts) 10 1.0 i f , instantaneous forward current (amps) 0.1 0.3 0.5 0.9 100 t j = 125 c 100 c 25 c , reverse current (amps) r 40 0 v r , reverse voltage (volts) 100e-3 10e-3 1.0e-3 100e-6 10e-6 1.0e-6 i 10 20 30 , maximum reverse current (amps) r 2.0 r jl = 24 c/w t j = 125 c 100 c 25 c t j = 125 c 100 c 25 c dc square wave dc square wave ipk/io = ipk/io = 5.0 ipk/io = 10 ipk/io = 20 2.5 3.0 0110 90 40 80 20 60 140 120 100
ss22t3g, ss24t3g, NRVBSS24T3G www. onsemi.com 4 figure 7. capacitance figure 8. typical operating temperature derating * figure 9. thermal response ? junction to case figure 10. thermal response ? junction to ambient 30 0 v r , reverse voltage (volts) 1000 100 10 v r , dc reverse voltage (volts) 25 40 0 105 85 75 65 c, capacitance (pf) t 15 5.0 10 20 25 35 40 30 35 5.0 10 20 15 95 115 125 , derated operating temperature ( c) j * reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re - verse voltage conditions. calculations of t j therefore must include forward and reverse power effects. the allowable operating t j may be calculated from the equation: t j = t jmax ? r(t)(pf + pr) where r(t) = thermal impedance under given conditions, pf = forward power dissipation, and pr = reverse power dissipation this graph displays the derated allowable t j due to reverse bias under dc conditions only and is calculated as t j = t jmax ? r(t)p r, where r(t) = rthja. for other power applications further calculations must be performed. r tja = 24 c/w 43 c/w 63 c/w 80 c/w 93 c/w t j = 25 c 0.1 0.00001 t, time (s) 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 r 0.0001 0.001 0.01 , transient thermal resistance (normalized) t 1.0 10 100 1000 50% 20% 10% 5.0% 2.0% 1.0% r tjl(t) = r tjl*r(t) 0.1 0.00001 t, time (s) 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 0.0001 0.001 0.01 1.0 10 100 1000 50% 20% 10% 5.0% 2.0% 1.0% r tjl(t) = r tjl*r(t) r , transient thermal resistance (normalized) t
ss22t3g, ss24t3g, NRVBSS24T3G www. onsemi.com 5 package dimensions smb case 403a?03 issue j 2.261 0.089 2.743 0.108 2.159 0.085 mm inches scale 8:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e b d c l1 l a a1 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension b shall be measured within dimension l1. dim a min nom max min millimeters 1.95 2.30 2.47 0.077 inches a1 0.05 0.10 0.20 0.002 b 1.96 2.03 2.20 0.077 c 0.15 0.23 0.31 0.006 d 3.30 3.56 3.95 0.130 e 4.06 4.32 4.60 0.160 l 0.76 1.02 1.60 0.030 0.091 0.097 0.004 0.008 0.080 0.087 0.009 0.012 0.140 0.156 0.170 0.181 0.040 0.063 nom max 5.21 5.44 5.60 0.205 0.214 0.220 h e 0.51 ref 0.020 ref d l1 h e polarity indicator optional as needed on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ss24/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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